Abstract:Thermoelectric materials use internal carrier transport to achieve direct conversion of thermal and electrical energy. Silicon-germanium alloy is a high-temperature thermoelectric material with excellent performance. It has irreplaceable advantages in the fields of space nuclear power supply and industrial waste heat utilization. N-type Si80Ge20Px was prepared by one-step hot pressing method, and the carrier concentration was optimized by changing the doping. Phase analysis and microstructure analysis were conducted on the samples, and the thermoelectric properties of each sample were tested and compared. The results show that Si80Ge20 can be successfully prepared by one-step hot pressing method with uniform composition. Increasing the doping of P can increase the carrier concentration and thus improve the thermoelectric performance of the material. The ZT of Si80Ge20P2.0 reaches 0.78 at 800 ℃. The method has a simple process, can accurately control the doping of P, and can obtain an N-type Si80Ge20 with better performance through carrier concentration optimization.