Abstract:In order to obtain Niobium films with excellent structure and interfacial bonding properties, the Niobium film was prepared on the surface of oxygen-free copper by DC bias diode sputtering technology. With the help of SEM, AFM, XPS, and scratch tester, the influence of substrate temperature on film structure and interface bonding ability is analyzed. The results show that with the increase of substrate temperature, the particle size of niobium film increase, the surface roughness increases from Ra 27.6 nm to Ra 65.3 nm, and the film thickness increases from 2.832 μm to 6.021 μm. With the increase of substrate temperature, the oxidation phenomenon weakens. The oxygen content in the films prepared at 400 ℃ is the lowest, accounting for only 7.47%. There is only slight oxidation phenomenon in the film, which indicates that the niobium film prepared by sputtering has high purity and less impurity content. When the substrate temperature is changed, the interfacial bonding strength between niobium film and substrate does not change significantly, and the interfacial bonding strength is higher than 50N.

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